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《工程塑料应用》 2020年第10期
DOI:10.3969/j.issn.1001-3539.2020.10.003
界面缓冲层对全旋涂式PVDF-TrFE/ZnO量子点传感器压电性能的影响
李洁,王晨,方兆舟,刘茜,赵春毛,李迎春
中北大学材料科学与工程学院,太原 030051 
Effects of Interface Buffer Layer on Piezoelectricity of PVDF-TrFE/ZnO Quantum Dots Sensors Prepared by a Fully Spin-coating Method
Li Jie, Wang Chen, Fang Zhaozhou, Liu Xi, Zhao Chunmao, Li Yingchun
School of Materials Science and Engineering, North University of China, Taiyuan 030051, China 
摘要:首先制备了聚偏氟乙烯-三氟乙烯(PVDF-TrFE)/氧化锌(ZnO)量子点复合压电薄膜,采用广角X射线衍射仪、激光共聚焦显微镜及原子力显微镜等对其结构及形貌进行了表征。以其作为核心功能层,以聚乙烯吡咯烷酮(PVP)为界面缓冲层,采用全旋涂法成功制备了PVDF-TrFE/ZnO量子点压电传感器,分别利用落球试验及激振试验研究了PVP对传感器压电性能的影响。结果表明,添加PVP界面缓冲层的压电传感器输出电压为(1.84±0.06) V,误差棒较小,且在抗疲劳测试中经过3500次机械循环后,输出电压仍保持在0.83 V。一方面,PVP缓冲层的亲水性使其分别与压电层中的ZnO量子点、聚(3,4-乙撑二氧噻吩):聚苯乙烯磺酸(PEDOT:PSS)电极层紧密结合,利于电荷在压电层与电极之间的传输;另一方面,PVP缓冲层良好的成膜性改善了压电层和PEDOT:PSS电极层的层间接触,利于收集更多的压电层电荷。制备的全旋涂式PVDF-TrFE/ZnO量子点压电传感器在柔性可穿戴领域具有广阔的应用前景。 
Abstract:Polyvinylidene fluoride-trifluoroethylene/zinc oxide quantum dots (PVDF-TrFE/ZnO QDs) composite piezoelectric film was firstly prepared, and their structure and morphology were characterized by wide-angle X-ray diffraction, laser confocal microscopy, atomic force microscopy and so on. Further, the piezoelectric sensor of PVDF-TrFE/ZnO QDs with polyvinylpyrrolidone (PVP) as an interface buffer layer was successfully prepared by a fully spin-coating method. The effects of PVP layer on piezoelectricity of the sensor was studied by ball-drop test and excitation test respectively. The results show that the open-circuit voltage value of the sensor with PVP layer is (1.84±0.06) V and the error bar is small. In the anti-fatigue test the output voltage remains at 0.83 V after 3500 mechanical cycles. On the one hand, the hydrophilicity of the PVP buffer layer makes it closely bond with ZnO QDs in the piezoelectric layer and PEDOT: PSS electrode, which is good for the charge transfer between the piezoelectric layer and the electrode. On the other hand, the good film formation of the PVP buffer layer improves the interface contact between the piezoelectric layer and the PEDOT: PSS electrode, which is helpful to collect more charges from the piezoelectric layer. The PVDF-TrFE/ZnO QDs piezoelectric sensor prepared by a fully spin-coating method has a broad application in the field of flexible wearable. 
关键词:界面缓冲层;全旋涂法;聚偏氟乙烯-三氟乙烯/氧化锌量子点压电传感器;聚乙烯吡咯烷酮 
Keywords:interface buffer layer; fully spin-coating method; PVDF-TrFE/ZnO QDs piezoelectric sensor; polyvinylpyrrolidone 
基金:国家自然科学基金青年基金项目(51903225),山西省留学回国人员基金项目(HGKY2019073),山西省重点研发计划项目(201903D121061),山西省研究生教育创新项目(2020SY357) 
本文引用格式:
李洁,王晨,方兆舟,等.界面缓冲层对全旋涂式PVDF-TrFE/ZnO量子点传感器压电性能的影响[J].工程塑料应用,2020,48(10):13-18.
Li Jie,Wang Chen,Fang Zhaozhou,et al. Effects of interface buffer layer on piezoelectricity of PVDF-TrFE/ZnO quantum dots sensors prepared by a fully spin-coating method[J]. Engineering Plastics Application,2020,48(10):13-18. 

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